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| 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1165 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 12 48 12 100 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1165, 2SK1166 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1165 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1166 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1165 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1166 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1165 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 6.0 -- -- -- -- -- -- -- -- -- 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 3.0 0.55 0.60 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 12 A, VGS = 0 IF = 12 A, VGS = 0, diF/dt = 100 A/s ID = 6 A, VGS = 10 V, RL = 5 ID = 6 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1166 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 450 -- ns -------------------------------------------------------------------------------------- 2SK1165, 2SK1166 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 80 10 3 1.0 0.3 0.1 0 50 100 Case Temperature TC (C) 150 1 Maximum Safe Operation Area 10 0 s O is per Lim at ite ion d in by th R is A DS re (o a n 10 s D C PW O = 1 10 m ) m s sh pe ra tio s C n (1 (T 40 = ot ) 25 C ) Ta = 25C 2SK1166 2SK1165 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 10 V 6V 16 Drain Current ID (A) 8V 5.5 V Drain Current ID (A) 16 Typical Transfer Characteristics VDS = 20 V Pulse Test 12 5.0 V 12 8 4.5 V 4 VGS = 4 V 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 8 75C -25C TC = 25C 4 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 2SK1165, 2SK1166 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 15 A Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test VGS = 10 V 8 2 1.0 0.5 6 10 A 4 ID = 5 A 2 15 V 0.2 0.1 0.05 0.5 0 8 4 12 16 Gate to Source Voltage VGS (V) 20 1.0 10 5 20 2 Drain Current ID (A) 50 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 0.8 15 A 10 A ID = 5 A 0.6 Forward Transfer Admittance yfs (S) 1.0 50 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test -25C TC = 25C 75C 20 10 5 0.4 2 1.0 0.5 0.2 0.2 0 -40 40 0 80 120 Case Temperature TC (C) 160 0.5 2 10 5 1.0 Drain Current ID (A) 20 2SK1165, 2SK1166 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 200 100 di/dt = 100 A/s, Ta = 25C VGS = 0 V Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 100 Crss 50 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V VGS 12 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V PW = 2 s, duty < 1% Switching Time t (ns) 200 100 50 td (on) td (off) tr tf 400 VDS 16 300 200 VDD = 400 V 250 V 100 V ID = 12 A 8 20 10 5 0.5 100 4 0 0 40 20 60 80 Gate Charge Qg (nc) 100 1.0 10 2 5 20 Drain Current ID (A) 50 2SK1165, 2SK1166 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5, 10 V VGS = 0, -10 V 4 0 0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ho ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T 0.03 1S 0.01 10 lse t Pu T 100 1m 10 m Pulse Width PW (s) 100 m 10 2SK1165, 2SK1166 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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